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US Patent Issued to INTERNATIONAL BUSINESS MACHINES on June 30 for "Vertical transport field-effect transistor with late fin cut" (New York Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,299, issued on June 30, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Vertical transport field-effect transistor w... Read More


US Patent Issued to GLOBALFOUNDRIES U.S. on June 30 for "Nanosheet structures with corner spacer" (Belgian, American Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,300, issued on June 30, was assigned to GLOBALFOUNDRIES U.S. Inc (Malta, N.Y.). "Nanosheet structures with corner spacer" was invented by B... Read More


US Patent Issued to Qorvo US on June 30 for "High electron mobility transistor device having an aluminum-doped buffer layer" (Texas Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,301, issued on June 30, was assigned to Qorvo US Inc. (Greensboro, N.C.). "High electron mobility transistor device having an aluminum-dope... Read More


US Patent Issued to Wolfspeed on June 30 for "Barrier structure for dispersion reduction in transistor devices" (North Carolina, California Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,302, issued on June 30, was assigned to Wolfspeed Inc. (Durham, N.C.). "Barrier structure for dispersion reduction in transistor devices" w... Read More


US Patent Issued to SUMITOMO ELECTRIC INDUSTRIES on June 30 for "High electron mobity transistor with gradient aluminum composition in barrier layer" (Japanese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,303, issued on June 30, was assigned to SUMITOMO ELECTRIC INDUSTRIES LTD. (Osaka, Japan). "High electron mobity transistor with gradient al... Read More


US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on June 30 for "Electrostatic discharge protection device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,304, issued on June 30, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan). "Electrostatic discharge protection d... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 30 for "Semiconductor device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,306, issued on June 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and method... Read More


US Patent Issued to United Microelectronics on June 30 for "FinFET device with extra body portion and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,307, issued on June 30, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan). "FinFET device with extra body portion and method ... Read More


US Patent Issued to ZINITE on June 30 for "Thin-film transistors with gate-source capacitance tuning" (Canadian Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,308, issued on June 30, was assigned to ZINITE Corp. (Edmonton, Canada). "Thin-film transistors with gate-source capacitance tuning" was in... Read More


US Patent Issued to International Business Machines on June 30 for "Semiconductor structures with wrap-around contact structure" (New York Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,309, issued on June 30, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Semiconductor structures with wrap-around co... Read More